N2 Process Node

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TSMC
TSMC
N2 Process Node

Overview

TSMC's 2nm-class node and its first with gate-all-around nanosheet transistors, delivering 10–15% more speed or 25–30% less power than N3E. Volume production began on schedule in Q4 2025 at Fab 22 (Kaohsiung) and Fab 20 (Hsinchu), with the enhanced N2P variant following in H2 2026 — the process powering the next generation of flagship smartphone and AI silicon.

In volume production since Q4 2025 with reported yields around 70%; ramping through 2026 on smartphone and HPC demand, N2P due H2 2026

Key Specs

Volume production start

Q4 2025 (on schedule)

Performance vs N3E

10–15% speed gain or 25–30% power reduction

Reported yield

~70% (early 2026)